| Diode Models |
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| • | 2nd
approximation |
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| – | Ideal Switch |
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| – | Barrier
potential, VB |
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| Si ≈ 0.7 volts |
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| Ge ≈ 0.3 volts |
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| ID |
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| Forward-Biased |
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| High Current |
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| VB |
| 0 |
| VD |
