| Triggering
Devices |
|
|
|
|
|
|
|
|
|
|
|
| • | UJT |
|||||||||
| – | 0.5 < η < 0.9 |
|||||||||
| – | Emitter region
heavily doped |
|||||||||
| – | VE
– B1 = 0, p-n junction reverse biased |
|||||||||
| – | Increase
VE – B1, reach peak point (maximum |
|||||||||
| current) |
||||||||||
