EE 231
Analog
Electronics I
Course Syllabus (Fall 2013)
Fairfield
University School
of Engineering
|
Course
Number: EE 231 |
Course
Name: Analog Electronics I |
|
Time: Mon/Thurs
2:00pm - 3:15pm |
Course Location: BNW
318 |
|
Instructor: Jeffrey
N. Denenberg |
Final Exam: Friday,
13Dec at 3 pm |
|
Office: Bannow
301C |
Hours: Tues, Wed & Fri 11:00 –
Noon, |
|
Office Phone:
203-254-3330 |
Google
Voice: (203) 513-9427 |
|
Email: jeffrey.denenberg@ieee.org |
Course Description:
This is the first course in active and non-linear electronics. Basic principles and technologies to understand, analyze and design electronic circuits will
be
taught. Electronic device models are
described and used in the analysis
of
circuits using diodes, Bipolar Junction Transistors (BJT)
and Field Effect Transistors
(FET). Amplifier biasing techniques are presented and analyzed with respect to power efficiency and circuit stability. H-Parameter
models are
used for low
frequency, small signal analysis of
Linear Amplifiers. Digital
Electronics Circuits, including Gate level &
Transistor level
Digital Circuits
design, are introduced.
Prerequisites: EE213,
MA228
Objectives and
Outcomes
|
No. |
Objective |
Outcome |
a –
k |
|
0 |
Role of
electronics in the modern world |
Students will
understand the role and importance of electronics in the modern world. |
f, h, i, j |
|
1 |
Analysis and design using
amplifier circuits |
Students will be able to analyze and design biasing circuits for amplifiers and relate it to
the given
requirements. |
a, c. e, k |
|
2 |
Basic BJT and
FET amplifier circuits design |
Students will be able to design BJT and FET circuits for a given application
to
meet performance requirements |
a, c. e, k |
|
3 |
Create Small Signal
Equivalent
circuits for BJT and FET circuits |
Students will learn
to develop AC equivalent circuits to help
in analysis of the amplifier circuits both for BJT and FET |
a, c. e, k |
|
4 |
Analyze small signal frequency response for a given circuit |
Students will learn to
use small signal AC
equivalent circuits in the frequency analysis of
transistor amplifiers
and evaluation
of their performance |
a, c. e, k |
|
5 |
Analyze Gate level & Transistor level digital
circuits |
Students will learn
to analyze and evaluate the performance of basic digital
circuits |
a, e, k |
|
6 |
Learn Basic Diode
Design & Operation |
Students will learn
diode principle of operation
and basic design steps |
a, c. e, k |
|
7 |
Learn to Design
and Application
of Basic Op Amps |
Students will learn
Op
Amp concepts and
basic design of Op Amps |
a, c. e, k |
|
8 |
Write complete but concise
Laboratory reports |
Students will report on their
laboratory design work. |
a, b, c, d, e, f, g, h, i, j, k |
Textbook:
Author: Sedra
& Smith
Title: Microelectronic
Circuits, 2nd Edition (2010)
ISBN # 0195323033
Publisher:
Oxford (OUP)
Performance Indicators and grading:
Two written exams
will be given at approximately equal
intervals during the term as
outlined in the syllabus. The exams
will be open book, open notes.
|
Semester Exams
(2) |
40% |
|
Final Exam |
20% |
|
Homework |
20% |
|
Laboratory Reports |
20% |
Exam grading:
The purpose of the exam is to convey your understand the material; therefore, it is
important that you show your work. Even if you feel
that the solution to a problem is obvious; you must still explain why it is
obvious.
Furthermore; if you are
asked to solve
a problem using a given technique; then please use that technique; otherwise, I have no
way to judge your understanding of the technique being tested.
Homework policy:
The purpose of homework:
A: To give student practice.
B: To give professor feedback.
Homework
will
be
collected and graded.
Grade is based more on honest effort than correct answers.
Homework
is due
the
next class after it is assigned (except when specified). This two
week
homework cycle gives an intervening class
where
students can ask questions. Late homework
assignments are not accepted. If you know you have a conflict, please make arrangements ahead for time.
If you know in advance that you will
be
missing class please contact me to make arrangements regarding homework.
If you understand how to
do the homework problems you will have an easier time
with the Exams.
Class structure:
Lectures will be the primary source of information.
Students
are expected to attend
every class and to participate in class discussions. Homework assignments will
be discussed in class. Students will be expected to work
problems in class. You will
find
it beneficial
to review the chapters before the lecture.
Your laboratory reports on
your team design projects in the co-requisite EE231L count towards the lecture
course grade as well as your Lab grade.
This is to encourage you to put in a good effort on and use of the
lecture materials in your designs.
Office hours
are open for discussion of anything. You can get help with
homework, projects, or more detailed explanations of topics covered in class. Feel free to stop by,
email me, or make an appointment to meet another
time.
Class Topics and Order of Material
|
Week |
Topics |
Notes |
Text |
HW* |
Objectives |
|
9/5 |
Course Introduction
and Pre-Requisite Material Review |
1.1 – 1.2 |
1.1, 1.4, 1.7, 1.9,
1.11, 1.17, 1.19, 1.21, 1.22, 1.24 |
0 |
|
|
9/9 9/12 |
Introduction
to Electronics |
1.3 – 1.6 |
1.27,
1.29, 1.32, 1.34, 1.39, 1.41, 1.66, 1.71 |
1,2 |
|
|
9/16 9/19 |
Signals
and Amplifiers |
All |
2.2,
2.11**, 2.14, 2.18, 2.26, 2.71, 2.92, 2.94, 2.121 |
1,2,7 |
|
|
9/23 9/26 |
Semiconductors,
PN Junctions, and Fermi‑‑Dirac distributions |
All |
3.1, 3.4, 3.9,
3.13, 3.22, 3.27 |
1,6 |
|
|
9/30 10/3 |
Review
for Exam 1 Exam 1 (Chapters 1-3) |
|
|
|
1,2,6,7 |
|
10/7 10/10 |
Exam
1 Reprise Semiconductor
Diodes |
|
4.1 – 4.4 |
4.1, 4.13, 4.18,
4.27, 4.32, 4.37 |
1,2,6,7 6 |
|
10/14 10/17 |
Columbus
Day – No Classes Semiconductor
Diodes (Cont.) |
|
4.5 – 4.7 |
4.49,
4.51, 4.55, 4.63, 4.67, 4.85 |
6 |
|
10/21 10.24 |
MOS Field Effect Transistors |
Ch. 5 |
5.1 – 5.3 |
5.1,
5.8, 5.11, 5.17, 5.29, 5.57 |
2, 3, 4 |
|
10/28 10/31 |
MOS Field Effect Transistors
(Cont.) |
Ch. 5 |
5.4 – 5.6 |
5.69,
5.77, 5.95 |
2, 3, 4 |
|
11/4 11/7 |
MOS
Field Effect Transistors (Cont.) |
Ch. 5 |
5.7 – 5.9 |
5.102,
5.107, 5.112 |
2, 3, 4 |
|
11/11 11/14 |
Bipolar Junction Transistors |
6.1 – 6.4 |
6.1,
6.7, 6.28, 6.29, 6.32, 6.52, 6.73 |
2,
3, 4 |
|
|
11/18 11/21 |
Bipolar
Junction Transistors (cont.) Review
for Exam 2 |
|
6.5 – 6.9 |
6.94,
6.107, 6.119, 6.137, 6.146, 6.149 |
2, 3, 4 |
|
11/25 11/28 |
Exam 2
(Chapters 4-6) Thanksgiving – No Classes |
|
|
|
|
|
12/2 12/5 |
Exam 2 Reprise Introduction
to Digital Electronics |
All |
13.1, 13.21, 13.25 |
2, 3, 4 5 |
|
|
12/9 |
Course Review |
|
|
|
1-8 |
|
Friday |
Final
Exam (Comprehensive) |
1-6,13 |
|
|
|
*Students to perform outside of class, Most answers (not solutions) are in
Appendix I
** Use Multisim to confirm results