UNIVERSITY OF NEW HAVEN
Department of Electrical and Computer Engineering
EE247 - Electronics I
Course Syllabus
2004-2006 Catalog
Data: EE247- Electronics I. Credits
3. Signals and their frequency spectrum,
amplifiers, circuit models for amplifiers, frequency response. Operational amplifiers, frequency
response. Operational amplifiers, ideal
op-amp, inverting and noninverting configurations, op-amp circuits. Basic semiconductor concepts, drift currents,
the p-n junctions, analysis of diode circuits, Zener diodes. BJT transistors, physical structure and modes
of operation, biasing techniques, the BJT as an amplifier, biasing the BJT for
discrete circuit design, analysis of the transistor as a switch. Field-effect
transistors, structure and physical operation of MOSFETs, voltage-current
characteristics of various FETs. FET
circuits at DC, the FET as an amplifier.
Prerequisite: EE201 or EAS230 or equivalent
Textbook: Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits,
Reference: Jaeger and
Blalock, Microelectronic Circuit Design,
McGraw Hill 2007. Pang Lectures
Coordinator: jeffrey.denenberg@ieee.org, http://doctord.webhop.net, (203) 932-7198
Course Objectives: The objective of this course is to provide students with the basic knowledge of electronic devices; develop skill in the analysis and design of electronic circuits based on device application through instructions and project activities.
Course Assessment methods: Homework, quizzes, computer projects, final examination
Course outcomes: At the completion of this course students should:
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1. |
Have the fundamental knowledge of modern analog discrete circuits. (3, 4)# |
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2. |
Be able to analyze and design circuits containing operational amplifiers. (3,7,8) |
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3. |
Be able to analyze and design basic circuits containing rectifiers as well as zener diodes. (3,7,8) |
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4. |
Be able to analyze and design basic circuits containing MOSFET’s (& BJT’s). (3,7,8) |
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5. |
Be able to analyze and simulate small-scale electronic circuits using PSPICE. (6) |
# Numbers in the parenthesis refer to the program outcomes satisfied by these particular course outcomes
Prerequisites by topic:
1. Thevenin’s Theorem, superposition, loop and nodal analysis.
2. Sinusoidal Functions and their representation with phasors.
3. Impedance, admittance.
4. Sinusoidal steady state analysis.
5. Frequency response, both phase and amplitude.
6. RMS power, average power,
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Homework |
12.5% |
Computer Projects |
12.5% |
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3
Quizzes: |
37.5% |
Final Exam: adds Ch. 4 |
37.5% |
Tests and Grading
Policies:
Computer Usage: PSPICE
simulation package (use any of the ones below)
MultiSym, OrCad, or LTspiceIV
(Spice from Linear Technologies)
Professional Component: Contributes to engineering topics and design in the EE curriculum.
Course/Program Objectives: Contributes to EE program outcomes 3, 4, 6, 7 and 8.
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Topics |
Reference Notes |
Homework *Also use Spice |
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1. |
Introduction;
Signals; Frequency spectrum of signals 1.5 Days + Quiz (1/09/2009 - Friday) |
J-B: Introduction (1st
half)
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1.21, 1.29;
1.35, 1.37; 1.40, 1.44; 1.46, 1.54, 1.57; 1.69, 1.76; 1.82, 1.85
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|
2. |
Operational
Amplifiers; Introduction; Ideal OpAmp; Inverting and non-inverting
configuration; other applications of OpAmp circuits 2 Days + Quiz (1/13/2009 - Tuesday) |
2.2,
2.6; 2.16, 2.33; 2.45, 2.49; 2.62, 2.68, 2.72, 2.77; 2.83, 2.89, 2.91; 2.97,
2.98; 2.113, 2.119, 2.121, 2.125 |
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|
3. |
Diodes; The ideal diode;
Terminal characteristics of junction diodes; Analysis of diode circuits; The
Small signal model and its applications; Operation in the reverse breakdown
region-Zener diodes; Rectifier circuits; Clamping circuits; Basic
semiconductor concepts; Diffusion current; Drift current 2.5 Days + Quiz |
S-S:
Diodes J-B: Semiconductors (2nd
half)
J-B: PN Junction Diode
J-B: Diode Application Circuits
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3.11,
3.15; 3.19, 3.24; 3.33*, 3.36, 3.44*, 3.46, 3.49, 3.58,
3.62*; 3.65, 3.66, 3.71*; 3.72, 3.74, 3.81, 3.86*,
3.91; 3.93, 3.97, 3.99, 3.104; 3.107 |
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4. |
Field-Effect Transistors (FETs); Device
structure and physical operation of the E-type MOSFET; I-V characteristics of
the E‑MOSFET; MOSFET Circuits at DC; MOSFET as an amplifier and as a
switch; Biasing in MOS Amplifier Circuits; Small signal operation and model;
Single state MOS amplifiers; The MOSFET internal capacitances and high
frequency model; Frequency response of the CS amplifier; The CMOS Digital
logic inverter; The depletion type MOSFET; PSPICE simulation exercises 3
Days + Quiz |
S-S: MOS Field-Effect Transistors
J-B: MOSFET
(2nd Half)
J-B: MOSFET I-V
Characteristics, DC Analysis and Small Signal Model
J-B: MOSFET Examples
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4.5,
4.7; 4.13, 4.17, 4.19, 4.26; 4.34, 4.35, 4.37; 4.49; 4.58, 4.60, 4.63; 4.69,
4.77; 4.79 4.87*; 4.91; 4.100, 4.101; 4.105,
4.110, 4.111; 4.115, 4.119 |
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5. |
Bipolar Junction
Transistors; Device structure and physical operation; Current voltage characteristics; BJT as an
amplifier and as a switch; BJT Circuits at DC; Biasing in BJT amplifier
circuits; Small signal operation and model; Single state BJT amplifiers; The
BJT internal capacitances and high frequency model; Frequency response of the
CE amplifier; The BJT Digital logic inverter 2.5 Days (Quiz?) |
(As
Time permits) S-S: Bipolar Junction Transistors
J-B: Bipolar Junction
Transistors
J-B: BJT Transport
Model
J-B: BJT Biasing & Small
Signals
J-B: Small Signal Amplifier
Analysis
J-B: Comm.-Collector Amp.
(1st half)
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5.17;
5.20, 5.21, 5.30, 5.39, 5.41; 5.54, 5.57, 5.63, 5.66, 5.67; 5.69, 5.72, 5.82,
5.84, 5.87; 5.88, 5.89, 5.92; 5.104, 5.112, 5.115, 5.116; 5.130, 5.133,
5.135, 5.141, 5.144; 5.149, 5.151; 5.159, 5.161, 5.166; |
Schedule Notes:
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Class begins 1/5 and runs through 1/23 |
Two sessions per day; 8:30 am to 9:45 am and 2:45 pm to 4 pm |
Buckman Hall, Room B201 |
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Final Exam is 1/23 PM session |
PM sessions on 1/14 & 1/21 (Wednesdays) will use the 11:45 recitation time. Recitation will use the 2:45 class time |
The week 1 snow delay will be made up on Monday 1/14 during the 11:45 recitation session time. |