UNIVERSITY OF NEW HAVEN

Department of Electrical and Computer Engineering

EE247 - Electronics I

Course Syllabus

2004-2006 Catalog Data:EE247- Electronics I.Credits 3.Signals and their frequency spectrum, amplifiers, circuit models for amplifiers, frequency response.Operational amplifiers, frequency response.Operational amplifiers, ideal op-amp, inverting and noninverting configurations, op-amp circuits.Basic semiconductor concepts, drift currents, the p-n junctions, analysis of diode circuits, Zener diodes.BJT transistors, physical structure and modes of operation, biasing techniques, the BJT as an amplifier, biasing the BJT for discrete circuit design, analysis of the transistor as a switch. Field-effect transistors, structure and physical operation of MOSFETs, voltage-current characteristics of various FETs.FET circuits at DC, the FET as an amplifier.Prerequisite: EE201 or EAS230 or equivalent

Textbook:††††† Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Oxford University Press, 2004.

Reference:†††† Jaeger and Blalock, Microelectronic Circuit Design, McGraw Hill 2007. Pang Lectures

Coordinator: jeffrey.denenberg@ieee.org, http://doctord.webhop.net, (203) 932-7198

Course Objectives: The objective of this course is to provide students with the basic knowledge of electronic devices; develop skill in the analysis and design of electronic circuits based on device application through instructions and project activities.

Course Assessment methods: Homework, quizzes, computer projects, final examination

Course outcomes:†††† At the completion of this course students should:

 

1.

 

Have the fundamental knowledge of modern analog discrete circuits. (3, 4)#

 

2.

 

Be able to analyze and design circuits containing operational amplifiers. (3,7,8)

 

3.

Be able to analyze and design basic circuits containing rectifiers as well as zener diodes. (3,7,8)

 

4.

 

Be able to analyze and design basic circuits containing MOSFETís (& BJTís). (3,7,8)

 

5.

 

Be able to analyze and simulate small-scale electronic circuits using PSPICE. (6)

# Numbers in the parenthesis refer to the program outcomes satisfied by these particular course outcomes

Prerequisites by topic:

1.†††††††† Theveninís Theorem, superposition, loop and nodal analysis.

2.†††††††† Sinusoidal Functions and their representation with phasors.

3.               Impedance, admittance.

4.               Sinusoidal steady state analysis.

5.               Frequency response, both phase and amplitude.

6.               RMS power, average power,

Homework

12.5%

Computer Projects

12.5%

3 Quizzes: Ch. 1, 2, 3

37.5%

Final Exam: adds Ch. 4

37.5%

Tests and Grading Policies: †††††††††††

 

 

Computer Usage:††† PSPICE simulation package (use any of the ones below)
MultiSym, OrCad, or LTspiceIV (Spice from Linear Technologies)

Professional Component:†† Contributes to engineering topics and design in the EE curriculum.

Course/Program Objectives:†††††††† Contributes to EE program outcomes 3, 4, 6, 7 and 8.


 

Topics

Reference Notes

Homework†† *Also use Spice

1.

Introduction; Signals; Frequency spectrum of signals
Analog and digital signals; Amplifiers; Circuit models for amplifiers; Frequency response of amplifiers

1.5 Days + Quiz (1/09/2009 - Friday)

J-B: Introduction (1st half)

S-S: Introduction to Electronics

1.21, 1.29; 1.35, 1.37; 1.40, 1.44; 1.46, 1.54, 1.57; 1.69, 1.76; 1.82, 1.85

2.

Operational Amplifiers; Introduction; Ideal OpAmp; Inverting and non-inverting configuration; other applications of OpAmp circuits

2 Days + Quiz (1/13/2009 - Tuesday)

S-S: Operational Amplifiers

2.2, 2.6; 2.16, 2.33; 2.45, 2.49; 2.62, 2.68, 2.72, 2.77; 2.83, 2.89, 2.91; 2.97, 2.98; 2.113, 2.119, 2.121, 2.125

3.

Diodes; The ideal diode; Terminal characteristics of junction diodes; Analysis of diode circuits; The Small signal model and its applications; Operation in the reverse breakdown region-Zener diodes; Rectifier circuits; Clamping circuits; Basic semiconductor concepts; Diffusion current; Drift current

2.5 Days + Quiz

S-S: Diodes

J-B: Semiconductors (2nd half)

J-B: PN Junction Diode

J-B: Diode Application Circuits

3.11, 3.15; 3.19, 3.24; 3.33*, 3.36, 3.44*, 3.46, 3.49, 3.58,3.62*; 3.65, 3.66, 3.71*; 3.72, 3.74, 3.81, 3.86*, 3.91; 3.93, 3.97, 3.99, 3.104; 3.107

4.

Field-Effect Transistors (FETs); Device structure and physical operation of the E-type MOSFET; I-V characteristics of the E‑MOSFET; MOSFET Circuits at DC; MOSFET as an amplifier and as a switch; Biasing in MOS Amplifier Circuits; Small signal operation and model; Single state MOS amplifiers; The MOSFET internal capacitances and high frequency model; Frequency response of the CS amplifier; The CMOS Digital logic inverter; The depletion type MOSFET; PSPICE simulation exercises

3 Days + Quiz

S-S: MOS Field-Effect Transistors

J-B: MOSFET (2nd Half)

J-B: MOSFET I-V Characteristics, DC Analysis and Small Signal Model

J-B: MOSFET Examples

 

4.5, 4.7; 4.13, 4.17, 4.19, 4.26; 4.34, 4.35, 4.37; 4.49; 4.58, 4.60, 4.63; 4.69, 4.77; 4.79 4.87*; 4.91; 4.100, 4.101; 4.105, 4.110, 4.111; 4.115, 4.119

5.

Bipolar Junction Transistors; Device structure and physical operation;Current voltage characteristics; BJT as an amplifier and as a switch; BJT Circuits at DC; Biasing in BJT amplifier circuits; Small signal operation and model; Single state BJT amplifiers; The BJT internal capacitances and high frequency model; Frequency response of the CE amplifier; The BJT Digital logic inverter

2.5 Days (Quiz?)

(As Time permits)

S-S: Bipolar Junction Transistors

J-B: Bipolar Junction Transistors

J-B: BJT Transport Model

J-B: BJT Biasing & Small Signals

J-B: Small Signal Amplifier Analysis

J-B: Comm.-Collector Amp. (1st half)

5.17; 5.20, 5.21, 5.30, 5.39, 5.41; 5.54, 5.57, 5.63, 5.66, 5.67; 5.69, 5.72, 5.82, 5.84, 5.87; 5.88, 5.89, 5.92; 5.104, 5.112, 5.115, 5.116; 5.130, 5.133, 5.135, 5.141, 5.144; 5.149, 5.151; 5.159, 5.161, 5.166;

Schedule Notes:

Class begins 1/5 and runs through 1/23

Two sessions per day; 8:30 am to 9:45 am and 2:45 pm to 4 pm

Buckman Hall, Room B201

Final Exam is 1/23 PM session

PM sessions on 1/14 & 1/21 (Wednesdays) will use the 11:45 recitation time.Recitation will use the 2:45 class time

The week 1 snow delay will be made up on Monday 1/14 during the 11:45 recitation session time.